SI4160DY-T1-GE3

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SI4160DY-T1-GE3 datasheet

• Маркировка
  SI4160DY-T1-GE3
• Производитель
  Siliconix
• Описание
  Vishay Intertechnology SI4160DY-T1-GE3 Channel Mode: Enhancement Configuration: Single Quad Drain Triple Source Continuous Drain Current: 16.8 A Drain-source Breakdown Voltage: 30 V Drain-source On-res: 0.0049Ohm Drain-source On-volt: 30V Forward Transconductance Gfs (max / Min): 60 S Gate-source Breakdown Voltage: +/- 20 V Gate-source Voltage (max): ?±20V ID_COMPONENTS: 1950442 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Style: SMD/SMT Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Package / Case: SOIC-8 Narrow Package Type: SOIC N Pin Count: 8 Polarity: N Power Dissipation: 2500 mW Resistance Drain-source Rds (on): 0.0049 Ohm @ 10 V Transistor Polarity: N-Channel Type: Power MOSFET
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

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Скачать datasheet SI4160DY-T1-GE3.pdf
Файл формата Pdf 178,38 KB